High Power Complete System

This measurement system offers an all-in-one solution for high power characterization.

Facts & Benefits
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Fully automated process
Enables highly accurate characterization
Easy expandability with Measmatic for future requirements
On wafer & packaged in a single system
Flexibility with user-defined test plans

This measurement system offers a complete solution for the characterization of 2- and 3-pole power devices as field effect transistors (FETs), BJT transistors (Bipolar Junction), diodes, capacitors up to 3 kV and 100 A.

By contacting the device under test once, all relevant off-state and on-state parameters as well as characteristic capacitances (Ciss, Coss Crss) can be measured. I-V characterization can be performed in both pulsed and DC modes. The system thus operates at wafer level and can also be used for capped devices.

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