High Power Complete System

This measurement system offers a complete solution for the characterization of 2- and 3-pole power devices as field effect transistors (FETs), BJT transistors (Bipolar Junction), diodes, capacitors up to 3 kV and 100 A.

By contacting the device under test once, all relevant off-state and on-state parameters as well as characteristic capacitances (Ciss, Coss Crss) can be measured. I-V characterization can be performed in both pulsed and DC modes. The system thus operates at wafer level and can also be used for capped devices.