The high-power measurement station was developed especially for the challenges of GaN power semiconductors, among others. The ATV was faced with two particular challenges:

1. Safe handling of high currents and voltages when contacting on the DUT with minimized cable length.
2. Measurement of the current flow resistance "RDSon" during the switching behavior of the high-power transistor and thus the visualization of current collapse effects.

A typical measurement setup is not useful here, because the switching of high voltages to high currents cannot be performed by a standard measuring device. The use of the HVC switch developed by ATV ensures simultaneous connection of a high-voltage and a high-current SMU into one device. It enables automated wafer testing without manual reconnection. By optional integration of special HV bias T's, the standard parameters for CV characterization Ciss, Coss and Crss can also be recorded automatically.

On the other hand, an active probe card was developed for the so-called high dynamic RDSon test, which enables a very short distance from the source to the DUT on wafer. This reduced the issue of interfering inductance. An optimized circuit protects the components involved from the high voltage and enables measurement of the RDSon curve, with a time resolution in the µsec range. All solutions were implemented in a MPI TS2000-HP high power prober, together with a safety concept for the complete test bench. The ATV Measmatic SW was also used for flexible automation of all tests.